LM193 Dual Differential Comparator Total Ionizing Dose Test Report

The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined

RH1021BMH-10 Precision 10 V Reference Total Ionizing Dose Test Report

The purpose of this test was to validate the Analog Devices (ADI) RH1021BMH-10 flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for this flight lot with wafer lot number 769658.1 and lot date code (LDC) 1430A. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined

Evaluation of Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. We discuss the implications of the results for radiation hardness assuranc

Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of 3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively

Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation

Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes

Recent Radiation Test Results for Power MOSFETs

Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs

Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA GSFC and NEPP

Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions

NASA Goddard Space Flight Center's Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results

Total ionizing dose and displacement damage dose testing were performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use